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| NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB Efficiency = 50% D Available in Two Different Package Designs: NTE335 (W52N, Flange Mount) NTE336 (T93D, Stud Mount) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0 V(BR)CES IC = 50mA, VBE = 0 V(BR)EBO IE = 10mA, IC = 0 18 36 4 - - - - - - V V V Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Tests Common-Emitter Amplifier Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance Parallel Equivalent Input Impedance Parallel Equivalent Output Impedance Gpe Zin Zout - - VCC = 12.5V, POUT = 80W 80W, f = 30MHz 12 50 - - - - - - .938 - j.341 1.16 - j.201 1.06 1817pF 1.19 777pF - - - - - - dB % Cob VCB = 15V, IE = 0, f = 1MHz - - 250 pF hFE IC = 5A, VCE = 5V 10 - 150 Symbol Test Conditions Min Typ Max Unit NTE335 NTE336 .725 (18.42) E .250 (6.35) B .225 (5.72) E C .127 (3.17) Dia (2 Holes) 1.040 (26.4) Max .520 (13.2) C .230 (5.84) 1.061 (25.95) E E B Ceramic Cap .385 (9.8) Dia .480 (12.1) Dia .100 (2.54) .005 (0.15) .260 (6.6) .168 (4.27) .065 (1.68) .975 (24.77) .095 (2.42) 8-32-NC-3A Wrench Flat .750 (19.05) |
Price & Availability of NTE336
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